Datasheet > CMZB330(TE12R)

CMZB330(TE12R)

更新时间： 2024-01-22 13:26:15

品牌	Logo	应用领域
东芝 - TOSHIBA		测试二极管
页数	文件大小	规格书
5页	171K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,330V V(Z),10%,DO-215VAR

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技术参数
数据手册

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CMZB330(TE12R) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.88
配置：	SINGLE	二极管类型：	ZENER DIODE
最大动态阻抗：	5000 Ω	元件数量：	1
最高工作温度：	150 °C	最大功率耗散：	1 W
标称参考电压：	330 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	最大电压容差：	10%
工作测试电流：	0.5 mA	Base Number Matches：	1

CMZB330(TE12R) 数据手册

CMZB68~CMZB390

TOSHIBA Zener Diode Silicon Junction

CMZB68~CMZB390

○Communication, Control and

Unit: mm

Measurement Equipment

○Constant Voltage Regulation

②

•

Power dissipation: P = 1.0 W

Zener voltage: V = 68 to 390 V

Suitable for high-density board assembly due to the use of a small

surface-mount package, M−FLAT

①

0.16

Absolute Maximum Ratings (Ta = 25°C)

1.75 ± 0.1

+ 0.2

2.4 − 0.1

Characteristics

Power dissipation

Symbol

Rating

Unit

1.0 (Note 1)

150

°C

Junction temperature

① ANODE

② CATHODE

Storage temperature range

stg

−55 to 150

Note : Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature / current / voltage, etc.) are within the

absolute maximum ratings.

JEDEC

―

JEITA

TOSHIBA

3-4E1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Weight: 0.023 g (typ.)

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Note 1: Ta = 40°C

Device mounted on a glass-epoxy board

Board size: 50 mm × 50 mm

Land pattern: 6 mm × 6 mm

Board thickness: 1.6 mm

Land pattern dimensions for reference only

Unit: mm

1.4

3.0

1.4

2011-06-20

12 3 4 5

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