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CLS01

更新时间： 2024-09-28 03:25:51
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关
页数 文件大小 规格书
5页 210K
描述
Switching-Mode Power Supply (Secondary-Rectification) Applications (Low Voltage)

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中文翻译

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CLS01 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：R-PSSO-G1
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.75Is Samacsys：N
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.47 V
JESD-30 代码：R-PSSO-G1最大非重复峰值正向电流：100 A
元件数量：1相数：1
端子数量：1最高工作温度：125 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

CLS01 数据手册

 浏览型号CLS01的Datasheet PDF文件第2页浏览型号CLS01的Datasheet PDF文件第3页浏览型号CLS01的Datasheet PDF文件第4页浏览型号CLS01的Datasheet PDF文件第5页 
CLS01  
TOSHIBA Schottky Barrier Diode  
CLS01  
Switching-Mode Power Supply (Secondary-Rectification)  
Applications (Low Voltage)  
Unit: mm  
DC/DC Converter Applications  
②
•
•
•
•
Forward voltage: V  
= 0.47 V (max)  
FM  
Average forward current: I  
= 10 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for compact assembly due to small surface-mount package:  
“L−FLATTM” (Toshiba package name)  
①
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
10 (Note 1)  
100 (50 Hz)  
−40~125  
−40~150  
F (AV)  
Non-repetitive peak surge current  
Junction temperature  
I
A
FSM  
ANODE  
①
②
T
j
°C  
°C  
CATHODE  
Storage temperature range  
T
stg  
JEDEC  
JEITA  
⎯
⎯
Note 1: Tℓ = 88°C  
Rectangular waveform (α = 180°), V = 15 V  
R
TOSHIBA  
3-4F1A  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.15 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 3.0 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
I
⎯
⎯
⎯
⎯
⎯
⎯
0.34  
0.38  
0.45  
8.0  
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
V
= 5.0 A (pulse test)  
= 10 A (pulse test)  
0.47  
⎯
I
V
V
V
= 5 V (pulse test)  
= 30 V (pulse test)  
μA  
mA  
pF  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
I
0.1  
1.0  
⎯
C
= 10 V, f = 1.0 MHz  
R
530  
j
Device mounted on a glass-epoxy  
board  
(board size: 50 mm × 50 mm)  
(board thickness: 1.6 t)  
(soldering land)  
Thermal resistance  
(junction to ambient)  
R
⎯
⎯
⎯
⎯
100  
5
°C/W  
°C/W  
th (j-a)  
Cathode 5.7 mm × 6.2 mm  
Anode  
4.5 mm × 3.4 mm  
Thermal resistance  
(junction to lead)  
R
⎯
th (j-ℓ)  
1
2006-11-13  
12345

中文翻译

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