Datasheet > CGH31240F-AMP

CGH31240F-AMP

更新时间： 2022-02-26 11:53:27

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CGH31240F-AMP 数据手册

CGH31240F

240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar ampliﬁer applications.

The transistor is supplied in a ceramic/metal ﬂange package.

Typical Performance Over 2.7-3.1 GHz ^(T_C^{= 25˚C)}of Demonstration Ampliﬁer

Parameter

2.7 GHz

2.8 GHz

2.9 GHz

3.0 GHz

3.1 GHz

Units

Output Power

243

249

245

243

Gain

11.9

Power Added Efﬁciency

Note:

Measured in the CGH31240F-AMP ampliﬁer circuit, under 300 μs pulse width, 20% duty cycle, P_IN= 42 dBm.

Features

•

2.7 - 3.1 GHz Operation

12 dB Power Gain

60 % Power Added Efﬁciency

< 0.2 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...12

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