Datasheet > CGB240

CGB240

更新时间： 2024-02-28 05:19:42

品牌	Logo	应用领域
TRIQUINT		放大器功率放大器蓝牙
页数	文件大小	规格书
14页	451K
描述
2-Stage Bluetooth InGaP HBT Power Amplifier

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CGB240 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	10
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	TSSOP10,.19,20
电源：	3.3 V	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	技术：	GAAS

CGB240 数据手册

CGB 240

Datasheet

2-Stage Bluetooth InGaP HBT Power Amplifier

Applications:

Description:

• Bluetooth Class 1

The CGB240 GaAs Power Amplifier MMIC has been

especially developed for wireless applications in the

2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its

high power added efficiency and single positive sup-

ply operation makes the device ideally suited to

handheld applications. The device delivers 23 dBm

output power at a supply voltage of 3.2 V, with an

overall PAE of 50%. The output power can be ad-

justed using an analog control voltage (V_CTR). Simple

external input-, interstage-, and output matching cir-

cuits are used to adapt to the different requirements

of linearity and harmonic suppression in various ap-

plications.

• Cordless Phones

• Home RF

For WLAN applications (IEEE802.11b) or appli-

cations serving both WLAN and Bluetooth, we

recommend to use the CGB240B device.

Package Outline:

Features:

• Single voltage supply.

• Wide operating voltage range 2.0 - 5.5 V.

• P_OUT= 23 dBm at V_C= 3.2 V.

• Overall power added efficiency (PAE) typi-

cally 50%.

TSSOP-10-2

MSOP-10

• High PAE at low–power mode.

Pin Configuration:

• Analog power control with four power

steps.

1 & 2:

Vc1

RF In

Vcntrl1

Vcntrl2

Vc2

• Straight-Forward Matching; Few external

4, 5, & 10:

8 & 9:

components.

11 (Paddle): GND

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 2/13

12 3 4 5 6 7...14

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