Datasheet > CEG8304

CEG8304

更新时间： 2022-03-30 06:22:04

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	361K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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CEG8304 数据手册

CEG8304

PRELIMINARY

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -3.6A, R_DS(ON)= 58mΩ @V_GS= -10V.

R_DS(ON)= 85mΩ @V_GS= -4.5V.

Super High dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TSSOP-8 for Surface Mount Package.

TSSOP-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-30

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±20

-3.6

-14

I_DM

Maximum Power Dissipation

P_D

1.25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

100

C/W

Rev 1. 2008.June

http://www.cetsemi.com

This is preliminary information on a new product in development now .

Details are subject to change without notice .

12 3 4

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