Datasheet > CED10P10

CED10P10

更新时间： 2022-05-13 15:25:36

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	389K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CED10P10 数据手册

CED10P10/CEU10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-100V, -8A, R_DS(ON)= 350mΩ @V_GS= -10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

-100

±30

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

-8

Drain Current-Pulsed ^a

I_DM

-32

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.4

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

2.5

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

2009.Aug

http://www.cetsemi.com

12 3 4

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