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CDS0T23-T15LC PDF预览

CDS0T23-T15LC

更新时间： 2024-09-25 19:08:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
4页 287K
描述
Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT PACKAGE-3

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中文翻译

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CDS0T23-T15LC 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.76
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-G3
JESD-609代码：e3最大非重复峰值反向功率耗散：500 W
元件数量：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：15 V表面贴装：YES
技术：AVALANCHE端子面层：TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

CDS0T23-T15LC 数据手册

 浏览型号CDS0T23-T15LC的Datasheet PDF文件第2页浏览型号CDS0T23-T15LC的Datasheet PDF文件第3页浏览型号CDS0T23-T15LC的Datasheet PDF文件第4页 
Features  
Applications  
■ Lead free as standard  
■ RoHS compliant*  
■ Protects 1 line  
■ RS-232, RS-422 & RS-423 data lines  
■ Portable electronics  
■ Wireless bus protection  
■ Control & monitoring systems  
■ ESD protection > 40 KV  
CDSOT23-T03LC~T36LC – Low Capacitance TVS Diode Array Series  
General Information  
The markets of portable communications, computing and video equipment are  
challenging the semiconductor industry to develop increasingly smaller electronic  
components.  
2
1
Bourns offers Transient Voltage Suppressor Array Diodes for surge and ESD  
protection applications, in compact chip package SOT23 size format. The Transient  
Voltage Supressor Array series offers a choice of voltage types ranging from 3 V to  
36 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on  
standard pick and place equipment and their flat configuration minimizes roll away.  
3
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC  
61000-4-5 (Surge) requirements.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
Value  
Unit  
°C  
Operating Temperature  
Storage Temperature  
-55 to +150  
-55 to +150  
TSTG  
°C  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CDSOT23-  
T12LC  
Parameter  
Symbol  
Unit  
T03LC  
T05LC  
T08LC  
T15LC  
T24LC  
T36LC  
Breakdown Voltage @ 1 mA  
Working Peak Voltage  
VBR  
4.0  
3.3  
6.0  
5.0  
8.5  
8.0  
13.3  
12.0  
16.7  
15.0  
26.7  
24.0  
40.0  
36.0  
V
V
VWM  
Maximum Clamping Voltage  
VF  
VF  
ID  
7.0  
9.8  
13.4  
19.0  
24.0  
43.0  
51.0  
V
V
1
V
C
@ I  
P
Maximum Clamping Voltage  
10.9 V  
@ 43 A  
13.5 V  
@ 42 A  
16.9 V  
@ 34 A  
25.9 V  
@ 27 A  
30.0 V  
@ 17 A  
49.0 V  
@ 12 A  
76.8 V  
@ 9 A  
1
@ 8/20 µs V @ I  
C
PP  
Maximum Leakage Current  
@ V  
125  
5
20  
5
10  
5
2
1
5
1
5
1
5
µA  
WM  
Maximum Cap Bidirectional  
@ 0 V, 1 MHz  
Cj(SD)  
PPP  
5
pF  
W
Peak Pulse Power (tp = 8/20 µs)2  
500  
Notes:  
1. See Pulse Wave Form.  
2. See Peak Pulse Power vs. Pulse Time.  
3. Positive Potential is applied from Pin 1 to Pin 2 with Pin 2 as ground.  
4. Do not test or surge from Pin 2 to Pin 1.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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