Super Low VF SMD Schottky Barrier Rectifiers
CDBA120SL-G
Reverse Voltage: 20 Volts
Forward Current: 1.0 Amp
RoHS Device
SMA-F
Features
-Low Profile surface mount applications
in order to optimize board space.
0.062 (1.60)
0.055 (1.40)
0.114 (2.90)
0.098 (2.50)
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
0.181 (4.60)
0.157 (4.00)
0.012 (0.30)
0.006 (0.15)
-Silicon epitaxial planar chip,metal silicon junction.
Mechanical data
0.096 (2.44)
0.079 (2.00)
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA-F
0.008(0.20)
0.002(0.05)
0.208 (5.28)
0.189 (4.80)
0.060 (1.52)
0.030 (0.78)
-Terminals: Solder plated, solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.064 grams (Approx.)
Dimensions in inches and (millimeter)
Circuit Diagram
1
2
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Symbol
CDBA120SL-G
Units
Parameter
Max. Repetitive peak reverse voltage
Max. RMS voltage
VRRM
VRMS
VR
20
14
V
V
Max. Continuous reverse voltage
Max. Forward voltage @IF=1.0A
Operating Temperature
20
V
VF
0.31
V
TJ
-55 to +100
°C
Symbol
IO
Parameter
Conditions
MIN.
TYP.
MAX.
Units
See Fig.1
Forward rectified current
Forward surge current
1.0
A
A
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
30
VR =VRRM TA=25°C
VR =VRRM TA=100°C
IR
IR
1.0
20
mA
mA
Reverse current
Thermal resistance
Junction to ambient
RθJA
CJ
70
°C/W
Diode junction capacitance f=1MHZ and applied 4V DC reverse Voltage
Storage temperature
160
pF
°C
TSTG
-55
+150
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 1
QW-BL015
Comchip Technology CO., LTD.