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CDBA130L-HF PDF预览

CDBA130L-HF

更新时间: 2024-02-26 09:33:43
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Low VF SMD Schottky Barrier Rectifiers

CDBA130L-HF 数据手册

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Low VF SMD Schottky Barrier Rectifiers  
CDBA120L-HF Thru. CDBA140L-HF  
Reverse Voltage: 20 to 40 Volts  
Forward Current: 1.0 Amp  
RoHS Device  
Halogen Free  
DO-214AC (SMA)  
Features  
-Low Profile surface mount applications  
in order to optimize board space.  
0.067 (1.70)  
0.047 (1.20)  
0.114 (2.90)  
0.083 (2.10)  
-Low power loss, high efficiency.  
-High current capability, low forward voltage drop.  
0.181 (4.60)  
0.157 (4.00)  
-High surge capability.  
-Guarding for overvoltage protection.  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip,metal silicon junction.  
0.012 (0.30)  
TYP.  
0.098 (2.50)  
0.067 (1.70)  
Mechanical data  
-Epoxy: UL94-V0 rate flame retardant.  
0.008(0.20)  
-Case: Molded plastic, DO-214AC / SMA  
0.061 (1.55)  
0.004(0.10)  
0.030 (0.75)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
0.209 (5.30)  
0.185 (4.70)  
-Polarity: Indicated by cathode band.  
Dimensions in inches and (millimeter)  
-weight: 0.055 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
CDBA  
CDBA  
CDBA  
Parameter  
Symbol  
Units  
120L-HF  
130L-HF  
140L-HF  
Max. Repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
VRMS  
VF  
20  
20  
14  
30  
40  
40  
V
V
30  
21  
28  
V
Max. instantaneous forward voltage @  
1.0A, TA=25°C  
0.38  
0.40  
V
Operating Temperature  
TJ  
-50 to +100  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.2  
Forward rectified current  
Forward surge current  
1.0  
30  
A
A
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
1.0  
20  
mA  
mA  
Reverse current  
Thermal resistance  
Junction to ambient  
RθJA  
CJ  
80  
°C/W  
Diode junction apacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
130  
pF  
°C  
TSTG  
-50  
+150  
REV:B  
Page 1  
QW-JL006  
Comchip Technology CO., LTD.  

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