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CD00269478

更新时间： 2024-09-29 12:49:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	443K
描述
Dual N-channel 450 V, 3.2 Î©, 0.5 A SuperMESH3 Power MOSFET in SO-8

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CD00269478 数据手册

STS1DN45K3

Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3™

Power MOSFET in SO-8

Preliminary data

Features

R_DS(on)

max

Type

V_DSS

I_D

P_w

STS1DN45K3 450 V < 3.8 Ω

0.5 A

1.7 W

■ 100% avalanche tested

■ Low input capacitances and gate charge

■ Low gate input resistance

SO-8

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

SuperMESH3™ is a new Power MOSFET

technology that is obtained via improvements

applied to STMicroelectronics’ SuperMESH™

technology combined with a new optimized

vertical structure. The resulting product has an

extremely low on resistance, superior dynamic

performance and high avalanche capability,

making it especially suitable for the most

demanding applications.

Table 1.

Order codes

STS1DN45K3

Device summary

Marking

Packages

SO-8

Packaging

1ll45

Tape and reel

April 2010

Doc ID 17338 Rev 1

1/10

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...10

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