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CC1121 PDF预览

CC1121

更新时间： 2024-02-02 06:11:15
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
29页 897K
描述
High Performance Low Power RF Transceiver

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CC1121 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：QFN
包装说明：5 X 5 MM, GREEN, PLASTIC, QFN-32针数：32
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.1Is Samacsys：N
JESD-30 代码：S-PQCC-N32JESD-609代码：e4
长度：5 mm湿度敏感等级：3
功能数量：1端子数量：32
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：HVQCCN
封装等效代码：LCC32,.2SQ,20封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：3 V认证状态：Not Qualified
座面最大高度：0.9 mm子类别：Other Telecom ICs
标称供电电压：3 V表面贴装：YES
电信集成电路类型：TELECOM CIRCUIT温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：5 mm
Base Number Matches：1

CC1121 数据手册

 浏览型号CC1121的Datasheet PDF文件第1页浏览型号CC1121的Datasheet PDF文件第3页浏览型号CC1121的Datasheet PDF文件第4页浏览型号CC1121的Datasheet PDF文件第5页浏览型号CC1121的Datasheet PDF文件第6页浏览型号CC1121的Datasheet PDF文件第7页 
CC1121  
Table of Contents  
1
ELECTRICAL SPECIFICATIONS ....................................................................................................3  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
1.7  
1.8  
1.9  
A
G
BSOLUTE  
ENERAL  
M
AX  
R
ATINGS ................................................................................................................3  
C
HARACTERISTICS............................................................................................................3  
RF CHARACTERISTICS ......................................................................................................................3  
R
C
C
C
R
EGULATORY  
S
TANDARDS ...............................................................................................................4  
ODES ........................................................................................5  
ODES...................................................................................5  
ODES......................................................................................6  
URRENT  
URRENT  
URRENT  
C
C
C
ONSUMPTION, STATIC  
ONSUMPTION, TRANSMIT  
ONSUMPTION, RECEIVE  
M
M
M
ECEIVE  
P
ARAMETERS .....................................................................................................................6  
ARAMETERS...................................................................................................................9  
T
RANSMIT  
P
1.10 PLL PARAMETERS ............................................................................................................................9  
1.11 IMING .....................................................................................................................9  
SCILLATOR........................................................................................................9  
NPUT (TCXO)........................................................................................................9  
NPUT .......................................................................................................................9  
RC OSCILLATOR ..................................................................................................................9  
ESET..................................................................................................................................9  
W
AKE-UP AND T  
1.12 32 MH  
1.13 32 MH  
Z
C
C
RYSTAL  
O
Z
LOCK  
I
1.14 32  
1.15 32  
K
H
H
Z CLOCK I  
Z
K
1.16 I/O AND  
R
2
3
4
TYPICAL PERFORMANCE CURVES..............................................................................................9  
PIN CONFIGURATION.......................................................................................................................9  
BLOCK DIAGRAM ..............................................................................................................................9  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
F
R
T
REQUENCY  
S
YNTHESIZER ...............................................................................................................9  
ECEIVER .........................................................................................................................................9  
RANSMITTER...................................................................................................................................9  
NTERFACE...........................................................................................9  
WOR) ...........................................................................................9  
ODE......................................................................................................................................9  
IVERSITY .......................................................................................................................9  
ODE.......................................................................................9  
R
E
S
ADIO  
NHANCED  
NIFF  
C
ONTROL AND  
U
SER  
I
W
AKE-O  
N
-RADIO (E  
M
A
L
NTENNA  
D
OW  
P
OWER / HIGH PERFORMANCE M  
5
6
TYPICAL APPLICATION CIRCUIT.................................................................................................9  
HISTORY ...............................................................................................................................................9  
PRODUCTION DATA information is current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty. Production processing does  
not necessarily include testing of all parameters.  
SWRS111B – REVISED APRIL 2012  
Page 2 of 22  
1234567...29

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