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CAT5111YI-50-GT3 PDF预览

CAT5111YI-50-GT3

更新时间： 2024-01-25 11:14:39
品牌 Logo 应用领域
安森美 - ONSEMI 转换器数字电位计电阻器光电二极管
页数 文件大小 规格书
13页 157K
描述
100-Tap Digitally Programmable Potentiometer (DPP™) with Buffered Wiper

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CAT5111YI-50-GT3 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TSSOP包装说明：TSSOP, TSSOP8,.25
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：9 weeks风险等级：5.18
其他特性：NONVOLATILE MEMORY控制接口：INCREMENT/DECREMENT
转换器类型：DIGITAL POTENTIOMETERJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.4 mm
湿度敏感等级：1功能数量：1
位置数：100端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5/6 V认证状态：Not Qualified
电阻定律：LINEAR最大电阻容差：20%
最大电阻器端电压：3 V最小电阻器端电压：
座面最大高度：1.2 mm子类别：Digital Potentiometers
标称供电电压：3 V表面贴装：YES
技术：CMOS标称温度系数：300 ppm/ °C
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称总电阻：50000 Ω宽度：3 mm
Base Number Matches：1

CAT5111YI-50-GT3 数据手册

 浏览型号CAT5111YI-50-GT3的Datasheet PDF文件第1页浏览型号CAT5111YI-50-GT3的Datasheet PDF文件第2页浏览型号CAT5111YI-50-GT3的Datasheet PDF文件第4页浏览型号CAT5111YI-50-GT3的Datasheet PDF文件第5页浏览型号CAT5111YI-50-GT3的Datasheet PDF文件第6页浏览型号CAT5111YI-50-GT3的Datasheet PDF文件第7页 
CAT5111  
OPERATION MODES  
R
H
Operation  
¯¯¯  
INC  
¯¯  
CS  
¯
U/D  
C
C
H
High to Low  
High to Low  
High  
Low  
Low  
High  
Low  
X
Wiper toward RH  
Wiper toward RL  
R
WI  
R
WB  
Low to High  
Low to High  
High  
Store Wiper Position  
No Store, Return to Standby  
Standby  
C
W
Low  
X
X
X
L
Potentiometer  
Equivalent Circuit  
R
L
ABSOLUTE MAXIMUM RATINGS(1)  
Parameters  
Supply Voltage  
VCC to GND  
Inputs  
Ratings  
Units  
Parameters  
Ratings  
Units  
Operating Ambient Temperature  
Commercial (‘C’ or Blank suffix)  
Industrial (‘I’ suffix)  
-0.5 to +7  
V
0 to 70  
ºC  
ºC  
ºC  
ºC  
ºC  
-40 to +85  
+150  
¯¯  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
V
V
V
V
V
V
Junction Temperature  
CS to GND  
¯¯¯  
INC to GND  
Storage Temperature  
-65 to 150  
+300  
¯
Lead Soldering (10s max)  
U/D to GND  
RH to GND  
RL to GND  
RWB to GND  
RELIABILITY CHARACTERISTICS  
Symbol Parameter  
Test Method  
Min  
2000  
Typ  
Max  
Units  
V
(2)  
VZAP  
ESD Susceptibility MIL-STD-883, Test Method 3015  
(2) (3)  
ILTH  
TDR  
NEND  
Latch-Up  
JEDEC Standard 17  
100  
mA  
Data Retention  
Endurance  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 1003  
100  
Years  
Stores  
1,000,000  
DC ELECTRICAL CHARACTERISTICS  
VCC = +2.5 V to +6 V unless otherwise specified  
Power Supply  
Symbol Parameter  
VCC Operating Voltage Range  
Conditions  
Min  
2.5  
–
Typ  
–
Max  
6
Units  
V
VCC = 6 V, f = 1 MHz, IW = 0  
VCC = 6 V, f = 250 kHz, IW = 0  
Programming, VCC = 6 V  
–
200  
100  
1000  
500  
µA  
µA  
µA  
µA  
Supply Current  
(Increment)  
ICC1  
–
–
–
–
ICC2  
Supply Current (Write)  
VCC = 3 V  
–
–
¯¯  
CS = VCC - 0.3 V  
¯ ¯¯¯  
(3)  
ISB1  
Supply Current (Standby)  
–
75  
150  
µA  
U/D, INC = VCC - 0.3 V or GND  
Notes:  
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this  
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.  
(2) This parameter is tested initially and after a design or process change that affects the parameter.  
(3) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1 V to VCC + 1 V  
(4) IW = source or sink  
(5) These parameters are periodically sampled and are not 100% tested.  
© 2009 SCILLC. All rights reserved.  
Characteristics subject to change without notice  
3
Doc. No. MD-2008 Rev. S  
1234567...13

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