®
MegaBright Generation II LEDs
CxxxMB290-Sxx00
Cree’s MB™ Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s
proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire
bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s
MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V
ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series
chips are compatible with most radial and SMT LED assembly processes.
FEATURES
APPLICATIONS
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MegaBright LED Performance
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White LEDs
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460 & 470nm
LCD Backlighting Units
Outdoor LED Video Displays
Automotive Dashboard Lighting
Traffic Signals
MB-8 – 8.0 mW min.
MB-10 - 10.0 mW min.
MB-12 - 12.0 mW min.
MB-14 - 14.0 mW min.
MB-16 - 16.0 mW min (460 nm)
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505 nm - 6.0 mW min.
527 nm - 5.0 mW min.
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Single Wire Bond Structure
Class 2 ESD Rating
CxxxMB290-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
G•SiC LED Chip
InGaN
300 x 300 μm
Anode (+)
Mesa (junction)
250 x 250 μm
SiC Substrate
h = 250 μm
Gold Bond Pad
112 μm Diameter
Backside
Metallization
Cathode (-)
Subject to change without notice.
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