Datasheet > C30809

C30809

更新时间： 2025-07-13 22:28:11

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电
页数	文件大小	规格书
5页	143K
描述
N-Type Silicon PIN Photodetectors

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C30809 数据手册

N-Type Silicon PIN Photodetectors

EVERYTHING

IN A

C30807, C30808, C30809, C30810, C30822, C30831

NEW

LIGHT.

Description

Features

This family of N-type silicon p-i-n

•Broad Range of Photosensitive Surface Areas

photodiodes is designed for use in a wide

variety of broad band low light level

applications covering the spectral range

from below 400 to over 1100 nm.

0.2 mm to 100 mm

•Low Operating Voltage V = 45V

•Anti-Reflection Coated to Enhance Responsivity at 900 nm

•Hermetically-Sealed Packages

•Spectral Response Range 400 to 1100 nm

The different types making up this series

provide a broad choice in photosensitive

areas and in time response

characteristics. Each of the types is

antireflection coated to enhance

responsivity at 900 nm.

Maximum Ratings, Absolute-Maximum Values (All Types)

These characteristics make the devices

highly useful in HeNe and GaAs laser

detection systems and in optical

DC Reverse Operating Voltage V_R. . . . . . . . . . . . . . . .100 max. V

Photocurrent Density, jp at 22°C:

Average value, continuous operation . . . . . . . . . .5 mA/mm

demodulation, data transmission, ranging,

and high-speed switching applications.

Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm

Forward Current, I_F:

Average value, continuous operation . . . . . . . . . .10 max. mA

Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA

Ambient Temperature:

Storage, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . .-60 to +100°C

Operating, T_A. . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +80°C

Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200°C

12 3 4 5

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C3081172	HUBBELL	获取价格	CAPSTAN HOIST - 1000LB - 12V DC DRIVE, Improved design features a multiple-planetary drive
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