®
ISO 9001 Registered
Process C3013
CMOS 3µm
10 Volt Single Metal Analog
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Symbol
VTN
γN
Minimum
Typical
0.8
0.6
47
3.2
Maximum
Unit
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
0.6
1.0
V1/2
µA/V2
µm
µm
V
Conduction Factor
βN
LeffN
∆WN
BVDSSN
VTFP(N)
42
2.85
52
3.55
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
0.7
12
12
V
P-Channel Transistor
Threshold Voltage
Body Factor
Symbol
VTP
γP
Minimum
Typical
–0.8
0.55
15
3.2
0.9
Maximum
Unit
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
–0.6
–1.0
V1/2
µA/V2
µm
µm
V
Conduction Factor
βP
LeffP
∆WP
BVDSSP
VTFP(P)
13
2.85
19
3.55
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
–12
–12
V
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
Minimum
3.2
Typical
4.8
21
0.8
80
0.7
48
60
Maximum
Unit
KΩ/o
Ω/o
µm
Ω/o
µm
nm
nm
Ω/o
Ω/o
mΩ/o
nm
Comments
P-well
ρP-well(f)
6.5
27
ρN+
16
xjN+
ρP+
50
44
100
52
xjP+
TGOX
TP1P2
ρPOLY1
ρPOLY2
ρM1
15
15
22
22
30
30
30
60
TPASS
200+900
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CP1P2
Minimum
Typical
0.72
0.0523
0.030
0.57
Maximum
Unit
Comments
0.66
0.78
fF/µm2
fF/µm2
fF/µm2
fF/µm2
0.026
0.51
0.034
0.63
85
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