Datasheet > C231B3

C231B3

更新时间： 2022-02-26 13:39:04

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DIGITRON		/
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描述
SILICON CONTROLLED RECTIFIER

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C231B3 数据手册

D I G I T R O N S E M I C O N D U C T O R S

C230, C231 SERIES

SILICON CONTROLLED RECTIFIER

C230()3, C231()3 SERIES

C232, C233 SERIES

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off state voltage⁽¹⁾

(T_J= -40 to +100°C)

C230F, C231F, C230F3, C231F3, C232F, C233F

C230A, C231A, C230A3, C231A3, C232A, C233A

C230B, C231B, C230B3, C231B3, C232B, C233B

C230C, C231C, C230C3, C231C3, C232C, C233C

C230D, C231D, C230D3, C231D3, C232D, C233D

C230E, C231E, C230E3, C231E3, C232E, C233E

C230M, C231M, C230M3, C231M3, C232M, C233M

100

200

300

400

500

600

_RRM, V_DRM

Volts

Peak non-repetitive reverse voltage

(T_J= -40 to +100°C)

C230F, C231F, C230F3, C231F3, C232F, C233F

C230A, C231A, C230A3, C231A3, C232A, C233A

C230B, C231B, C230B3, C231B3, C232B, C233B

C230C, C231C, C230C3, C231C3, C232C, C233C

C230D, C231D, C230D3, C231D3, C232D, C233D

C230E, C231E, C230E3, C231E3, C232E, C233E

C230M, C231M, C230M3, C231M3, C232M, C233M

150

300

400

500

600

720

V_RSM

Volts

Forward current RMS

I_T(RMS)

I_TSM

Amps

Peak surge current

(one cycle, 60Hz, T_C= -40 to +100°C)

250

Circuit fusing considerations

I²t

A²s

(T_C= -40 to +100°C, t = 8.3ms)

260

Peak gate power

P_GM

P_G(AV)

I_GM

Watts

Amps

°C

Average gate power

0.5

Peak forward gate current

Operating junction temperature range

Storage temperature range

Mounting torque

T_J

-40 to +100

-40 to +125

T_stg

°C

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a

positive bias applied to the gate concurrently with a negative potential on the anode.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

Pressfit

R_ӨJC

°C/W

Isolated stud

1.15

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_C= 25°C

I_DRM, I_RRM

µA

T_C= 100°C

Forward “on” voltage

V_TM

Volts

(I_TM= 100A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)

1.9

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130128

12 3 4

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