Datasheet > C2328

C2328

更新时间： 2024-09-17 07:07:59

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描述
The C2328 is designed for use in power amplifier applications and power switching applications

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C2328 数据手册

C2328

C2328 Silicon NPN Epitaxial Transistor

Description: The C2328 is designed for use in power amplifier applications and power

switching applications

Features: ●Low collector saturation voltage

●Complementary to A1020

Chip Appearance

Chip Size

760um×760um

210±20um

160×170um

130×260um

Chip Thickness

Base

Bonding Pad Size

Emitter

Front Metal

Backside Metal

Scribe line width

Wafer Size

Au(As)

60um

6 inch

Electrical Characteristics( Ta=25℃)

Symbol

Test Condition

Min

Max

Unit

Characteristic

Collector Cutoff Current

I_CBO

I_EBO

V_CB=30V, I_E=0

V_EB=5V, I_C=0

0.1

Emitter Cutoff Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

BV_CBOI_C=0.1mA

BV_CEOI_C=10mA

BV_EBOI_E=0.1mA

5.0

h_FE

V_CE

V_CE=2V, I_C=0.5A

I_C=1A, I_B=50mA

400

0.5

Collector Saturation Voltage

(sat)

May.2004

Version :0.0

Page 1 of 1

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C232HM	FTDI	获取价格	USB 2.0 Hi-Speed to MPSSE Cable
C232HM-DDHSL-0	FTDI	获取价格	USB 2.0 Hi-Speed to MPSSE Cable
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C232U	POWEREX	获取价格	Silicon Controlled Rectifier, 25000mA I(T), 25V V(DRM)
C233	MOTOROLA	获取价格	Silicon Controlled Rectifier
C2333	ETC	获取价格	Optoelectronic
C2334	ETC	获取价格	Optoelectronic
C233E	POWEREX	获取价格	Silicon Controlled Rectifier, 25000mA I(T), 500V V(DRM)