Datasheet > C05IE150HV

C05IE150HV

更新时间： 2024-01-19 02:28:40

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管
页数	文件大小	规格书
7页	119K
描述
Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

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C05IE150HV 数据手册

STC05IE150HV

Emitter Switched Bipolar Transistor

ESBT 1500 V - 5 A - 0.12 Ω

Features

PRELIMINARY DATA

CS(ON)

0.6 V

5 A

0.12

■ High voltage / high current Cascode

configuration

■ Low equivalent on resistance

■ Very fast-switch, up to 150 kHZ

■ Squared rbsoa, up to 1500 V

■ Very low C

driven by R = 47 Ω

ISS

■ Very low turn-off cross over time

TO247-4LHV

■ In compliance with the 2002/93/EC European

Directive

Applications

Internal Schematic Diagram

■ Aux SMPS for three phase mains

■ Sepic PFC

Description

The STC05IE150HV is manufactured in

Monolithic ESBT Technology, aimed to provide

best performance in high frequency / high voltage

applications. it is designed for use in Gate Driven

based topologies.

Order Codes

Part Number

Marking

Package

Packaging

STC05IE150HV

C05IE150HV

TO247-4LHV

TUBE

Rev 2

November 2006

1/7

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7

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