Datasheet > BZX85C47RL2

BZX85C47RL2

更新时间： 2024-01-10 07:32:36

品牌	Logo	应用领域
TAK_CHEONG		测试二极管
页数	文件大小	规格书
7页	846K
描述
Zener Diode, 47V V(Z), 6.38%, 1.3W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS, DO-204AL, 2 PIN

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BZX85C47RL2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-204
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.13
Is Samacsys：	N	其他特性：	METALLURGICALLY BONDED
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	90 Ω	JEDEC-95代码：	DO-41
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.3 W
认证状态：	Not Qualified	标称参考电压：	47 V
子类别：	Voltage Reference Diodes	表面贴装：	NO
技术：	ZENER	端子面层：	TIN
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	6.38%
工作测试电流：	4 mA	Base Number Matches：	1

BZX85C47RL2 数据手册

BZX85C3V3 through BZX85C100 Series

APPLICATION NOTE

Since the actual voltage available from a given zener

∆T is the increase in junction temperature above the lead

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

temperature and may be found as follows:

∆T_JL= θ_JLP_D.

may be determined from Figure 3 for dc power

conditions. For worst-case design, using expected limits of

I , limits of P and the extremes of T (∆T ) may be

Lead Temperature, T , should be determined from:

T_L= θ_LAP_D+ T_A.

estimated. Changes in voltage, V , can then be found from:

is the lead-to-ambient thermal resistance (°C/W) and P

∆V = θ_VZ∆T_J.

is the power dissipation. The value for θ will vary and

, the zener voltage temperature coefficient, is found

depends on the device mounting method. θ is generally 30

from Figure 2.

to 40°C/W for the various clips and tie points in common use

and for printed circuit board wiring.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Surge limitations are given in Figure 5. They are lower

than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots, resulting in device

degradation should the limits of Figure 5 be exceeded.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

Using the measured value of T , the junction temperature

may be determined by:

T_J= T_L+ ∆T_JL

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BZX85C47RLRL	MOTOROLA	47V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C47RLRL2	MOTOROLA	47V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C47RLTA	MOTOROLA	47V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C47RLTA2	MOTOROLA	47V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C47-T	RECTRON	Zener Diode, 47V V(Z), 6.3%, 1.3W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN	获取价格
BZX85C47TA	TAK_CHEONG	Zener Diode, 47V V(Z), 6.38%, 1.3W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS	获取价格

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