Datasheet > BZX55-C24/A52R

BZX55-C24/A52R

更新时间： 2022-12-01 19:51:21

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
7页	41K
描述
24V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

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数据手册

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BZX55-C24/A52R 数据手册

WORKING

VOLTAGE

V_Z(V)

DIFFERENTIAL TEMP. COEFF.

TEST

CURRENT

I_Ztest(mA) at f = 1 MHz;

at V_R= 0 V

DIODE CAP.

C_d(pF)

REVERSE CURRENT at

REVERSE VOLTAGE

I_R(µA)

NON-REPETITIVE

PEAK REVERSE

CURRENT

I_ZSM(A)

at t_p= 100 µs;

T_amb= 25 °C

RESISTANCE

S_Z(mV/K)

at I_Ztest

r_dif(Ω)

BZX55-

CXXX

at I_Ztest

see Figs 5 and 6

I_Z

I_Ztest

V_R

T_j= 25 °C T_j= 150 °C

(V)

MIN. MAX. MAX.

MAX.

TYP.

MAX.

20.8

22.8

25.1

28.0

31.0

34.0

37.0

40.0

44.0

48.0

52.0

58.0

64.0

70.0

23.3

25.6

28.9

32.0

35.0

38.0

41.0

46.0

50.0

54.0

60.0

66.0

72.0

79.0

220

18.7

20.4

22.9

27.0

29.7

32.4

35.1

38.7

44.0

49.0

55.0

62.0

70.0

78.0

0.1

16.5

1.25

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.25

0.2

18.0

220

20.25

22.25

24.75

27.0

220

500

2.5

29.25

32.25

35.25

38.25

42.0

600

700

110

125

135

150

200

250

700

1000

1500

46.5

51.0

56.25

Note

1. For BZX55-C2V4 up to C36 I_Z= 1 mA; for C39 up to C75 I_Z= 0.5 mA.

1 2 345 6 7

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