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BZX55C24BPT PDF预览

BZX55C24BPT

更新时间: 2024-01-28 10:18:25
品牌 Logo 应用领域
力勤 - CHENMKO 二极管齐纳二极管局域网
页数 文件大小 规格书
4页 167K
描述
Zener Diode,

BZX55C24BPT 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-35包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:1.43其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:80 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-PALF-W2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified参考标准:AEC-Q101
标称参考电压:24 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5.79%工作测试电流:5 mA
Base Number Matches:1

BZX55C24BPT 数据手册

 浏览型号BZX55C24BPT的Datasheet PDF文件第2页浏览型号BZX55C24BPT的Datasheet PDF文件第3页浏览型号BZX55C24BPT的Datasheet PDF文件第4页 
BZX55C 0V8PT  
THRU  
CHENMKO ENTERPRISE CO.,LTD  
AXIAL LEAD  
SILICON PLANAR POWER ZENER DIODES  
BZX55C 200PT  
VOLTAGE RANGE 0.8V TO 200V  
FEATURE  
* High temperature soldering type.  
* ESD rating of class 3(>16 kV) per human body model.  
* Silicon planar zener diodes.  
DO-35  
* Silcon-oxide passivated junction.  
* Low temperature coefficient voltage  
(
)
.022 0.56  
MECHANICAL  
* Axial-lead hermetically sealed package.  
* DO-35 Packaging.  
DIA.  
(
)
.018 0.46  
(
)
1.02 26.0  
MIN.  
* Cathode indicated by polarity band.  
* Mounting position: Any.  
* Weight: Approx. 0.13g.  
(
)
.165 4.2  
MAX.  
(
)
.079 2.0  
DIA.  
MAX.  
(
)
1.02 26.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
DO-35  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VALUE  
-
UNITS  
Zener Current ( see Table "Characteristics" )  
-
-
o
Max. Steady State Power Dissipation @TL=75 C,Lead Length=3/8"  
PD  
500  
mW  
oC  
+175  
Max. Operating Temperature Range  
TJ  
oC  
-55 to +175  
Storage Temperature Range  
TSTG  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Thermal Resistance Junction to Ambient  
Max. Instantaneous Forward Voltage at IF= 100mA  
SYMBOL  
MIN.  
TYP.  
MAX.  
300  
UNITS  
oC/W  
R
JA  
-
-
-
-
VF  
1.0  
Volts  
2001-6  
NOTES : 1. The numbers listd have a standaerd tolerance on the normal zener voltage of +5%, Suffix " B "= +2% tolerance.  
2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%  
of DC zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee  
on the breakdown curve to eliminate unstable units.  
3. Valid provided that electrodes at distance of 8mm from case are kept ambient temperature.  
4. Measured under thermal equilibrium and DC test conditions.  
5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave  
or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT.  

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