Datasheet > BZM55C5V1TR3

BZM55C5V1TR3

更新时间： 2024-02-29 21:00:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	120K
描述
5.1V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, MICROMELF-2

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中文翻译

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数据手册

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BZM55C5V1TR3 数据手册

BZM55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Saving space

Hermetic sealed parts

Fits onto SOD 323 / SOT 23 footprints

Electrical data identical with the devices

BZT55C... / TZMC...

Very sharp reverse characteristic

Low reverse current level

Very high stability

96 12315

Low noise

Available with tighter tolerances

Applications

Voltage stabilization

Order Instruction

Type

BZM55C2V4

Ordering Code

BZM55C2V4–TR

BZM55C2V4–TR3

Remarks

Tape and Reel (2.500 pcs)

Tape and Reel (10.000 pcs)

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

Type

Symbol

Value

500

Unit

300K/W

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Junction tie point

Test Conditions

Symbol

thJA

Value

500

300

Unit

K/W

mounted on epoxy–glass hard tissue, Fig. 1

35 m copper clad, 0.9 mm copper area per electrode

thJL

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number

Rev. 4, 25-Jun-01

www.vishay.com

1 (6)

12 3 4 5 6

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