BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• High reliability
e3
• Stand-off Voltage range 8.2 V to 220 V
• Excellent clamping cabability
• Fast response time (typ. ≤ 1 ps from 0 to V
• Lead (Pb)-free component
)
Zmin
15811
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case: DO-214AC
Weight: approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
Symbol
Pdiss
Value
3
Unit
W
RthJA < 25 K/W, Tamb = 100 °C
R
thJA < 100 K/W, Tamb = 50 °C
Pdiss
1.25
300
W
W
Non repetitive peak surge power tp = 10/1000 µs sq.pulse,
PZSM
dissipation
Tj = 25 °C prior to surge
Peak forward surge current
Junction temperature
10 ms single half sine wave
IFSM
Tj
50
150
A
°C
°C
Storage temperature range
Tstg
- 65 to + 150
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJL
Value
25
Unit
Junction lead
K/W
K/W
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 1a
RthJA
RthJA
RthJA
150
125
100
mounted on epoxy-glass hard
tissue, Fig. 1b
K/W
K/W
mounted on Al-oxid-ceramic
(Al2O3), Fig. 1b
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 0.5 A
Symbol
VF
Min
Typ.
Max
1.2
Unit
V
Forward voltage
Document Number 85594
Rev. 2.2, 15-Sep-05
www.vishay.com
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