5秒后页面跳转
BZG03C82 PDF预览

BZG03C82

更新时间: 2024-01-14 13:53:00
品牌 Logo 应用领域
森美特 - SUNMATE 二极管测试
页数 文件大小 规格书
2页 416K
描述
3W axial zener diode SMA 82V series

BZG03C82 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-214
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BZG03C82 数据手册

 浏览型号BZG03C82的Datasheet PDF文件第2页 
8550SL  
Genral Purpose Transistors NPN silicon  
Mechanical Data  
SOT-23  
A
Dim  
Min  
Max  
·
·
Case: SOT-23, Molded Plastic  
A
B
C
D
E
G
H
J
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagrams  
B
C
·
·
TOP VIEW  
D
G
E
Approx. Weight: 0.008 grams  
H
K
M
J
K
L
L
M
a
All Dimensions in mm  
THERMALCHARACTERISTICS  
Symbol  
Unit  
Max  
Characteristic  
Total Device Dissipation FR- 5 Board (1)  
T A = 25 °C  
Derate above 25 °C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
225  
1.8  
mW  
PD  
RθJA  
PD  
mW /°C  
556  
°C/W  
300  
2.4  
mW  
Alumina Substrate, (2) T A = 25 °C  
Derate above 25 °C  
mW /°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
T
, T stg  
-55 to +150  
°C  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Emitter Breakdown Voltage  
(I C =-1.0mA)  
V (BR)CEO  
V (BR)EBO  
V (BR)CBO  
-25  
-5  
-40  
V
V
Emitter-Base Breakdown Voltage  
(I E = -100 µA)  
Collector-Base Breakdown voltage  
(I C= -100 µA)  
Collector Cutoff Current  
(VCB = -35 V)  
V
I
-150  
-150  
nA  
nA  
CBO  
Emitter Cutoff Current  
(VEB = -4V)  
I EBO  
1. FR-5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

与BZG03C82相关器件

型号 品牌 获取价格 描述 数据表
BZG03-C82 NXP

获取价格

Voltage regulator diodes
BZG03-C82 EIC

获取价格

VOLTAGE REGULATOR DIODES
BZG03-C82/T1 NXP

获取价格

82V, 1.25W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PACKAGE-2
BZG03-C82/T3 NXP

获取价格

DIODE 82 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PAC
BZG03C82-HM3-08 VISHAY

获取价格

DIODE ZENER 82V 1.25W DO214AC
BZG03C82-HM3-18 VISHAY

获取价格

DIODE ZENER 82V 1.25W DO214AC
BZG03C82-M VISHAY

获取价格

Zener Diodes
BZG03C82-M3-08 VISHAY

获取价格

DIODE ZENER 82V 1.25W DO214AC
BZG03C82-M3-18 VISHAY

获取价格

DIODE ZENER 82V 1.25W DO214AC
BZG03-C82-T NXP

获取价格

DIODE 82 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PAC