Datasheet > BZG03C8V2

BZG03C8V2

更新时间： 2024-01-07 22:30:33

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	416K
描述
3W axial zener diode SMA 8.2V series

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中文翻译

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数据手册

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BZG03C8V2 数据手册

8550SL

Genral Purpose Transistors NPN silicon

Mechanical Data

SOT-23

Dim

Min

Max

Case: SOT-23, Molded Plastic

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams

TOP VIEW

Approx. Weight: 0.008 grams

All Dimensions in mm

THERMALCHARACTERISTICS

Symbol

Unit

Max

Characteristic

Total Device Dissipation FR- 5 Board (1)

T _A= 25 °C

Derate above 25 °C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

225

1.8

P_D

R_θJA

P_D

mW /°C

556

°C/W

300

2.4

Alumina Substrate, (2) T _A= 25 °C

Derate above 25 °C

mW /°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

, T _stg

-55 to +150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ELECTRICAL CHARACTERISTICS (T _A= 25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

(I _C=-1.0mA)

V _(BR)CEO

V _(BR)EBO

V _(BR)CBO

-25

-5

-40

–

Emitter-Base Breakdown Voltage

(I _E= -100 µA)

Collector-Base Breakdown voltage

(I _C= -100 µA)

Collector Cutoff Current

(V_CB= -35 V)

–

-150

CBO

Emitter Cutoff Current

(V_EB= -4V)

I _EBO

–

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

中文翻译

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