Datasheet > BYW98200RL

BYW98200RL

更新时间： 2024-09-30 22:08:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		整流二极管功效快速恢复二极管
页数	文件大小	规格书
5页	54K
描述
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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中文翻译

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数据手册

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BYW98200RL 数据手册

BYW98-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

200 V

150 °C

0.85 V

35 ns

Tj (max)

V_F(max)

trr (max)

FEATURES AND BENEFITS

VERY LOW CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

LOW FORWARD AND REVERSE RECOVERY

TIMES

DO-201AD

(Plastic)

DESCRIPTION

Low voltage drop and rectifier suited for switching

mode base drive and transistor circuits.

ABSOLUTE RATINGS

Symbol

(limiting values)

Parameter

Value

Unit

V_RRM

I_FRM

200

110

Repetitive peak reverse voltage

Repetitive peak forward current *

tp=5 s

F=1KHz

I_{F (AV)}

I_FSM

Ta = 75°C

Average forward current*

= 0.5

t_p= 10ms

Sinusoidal

Surge non repetitive forward current

T_stg

- 65 to + 150

150

Storage temperature range

Maximum operating junction temperature

T_L

230

Maximum lead temperature for soldering during 10s at

4mm from case

* On infinite heatsink with 10mm lead length.

October 1999 - Ed: 4C

1/5

12 3 4 5

中文翻译

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