SILICON RECTIFIER DIODES
DO - 41
BYW27-50 - BYW27-1000
PRV : 50 - 1000 Volts
Io : 1.0 Amperes
FEATURES :
1.00 (25.4)
* High current capability
* High surge current capability
* High reliability
0.107 (2.7)
MIN.
0.080 (2.0)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MECHANICAL DATA :
0.034 (0.86)
MIN.
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BYW
BYW
BYW
BYW
BYW
BYW
BYW
RATING
SYMBOL
UNIT
27-50 27-100 27-200 27-400 27-600 27-800 27-1000
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70°C
Peak Forward Surge Current
IF
1.0
A
IFSM
50
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
VF
IR
1.0
0.2
25
V
mA
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
IR(H)
CJ
Ta = 100 °C
mA
pF
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
30
50
°C/W
°C
RqJA
TJ
- 65 to + 175
- 65 to + 175
TSTG
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
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Rev. 02 : March 25, 2005