5秒后页面跳转
BYV29-600 PDF预览

BYV29-600

更新时间: 2024-04-09 19:01:48
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
11页 416K
描述
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package

BYV29-600 数据手册

 浏览型号BYV29-600的Datasheet PDF文件第1页浏览型号BYV29-600的Datasheet PDF文件第2页浏览型号BYV29-600的Datasheet PDF文件第4页浏览型号BYV29-600的Datasheet PDF文件第5页浏览型号BYV29-600的Datasheet PDF文件第6页浏览型号BYV29-600的Datasheet PDF文件第7页 
WeEn Semiconductors  
BYV29-600  
Rectifier diode ultrafast  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Values  
Unit  
VRRM  
repetitive peak reverse  
voltage  
600  
V
VRWM  
crest working reverse  
voltage  
600  
V
VR  
reverse voltage  
δ = 1.0; square-wave pulse; Tmb ≤ 100 °C  
δ = 0.5; square-wave pulse; Tmb ≤ 120 °C  
δ = 0.5; Tmb ≤ 120 °C; square-wave pulse  
600  
9
V
A
A
IF(AV)  
IFRM  
average forward current  
repetitive peak forward  
current  
18  
IFSM  
non-repetitive peak  
forward current  
tp = 10 ms; sine-wave pulse  
tp = 8.3 ms; sine-wave pulse  
70  
77  
A
A
T
storage temperature  
junction temperature  
-40 to 150  
150  
°C  
°C  
stg  
Tj  
©
BYV29-600  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
7
March 2018  
3 / 11  

与BYV29-600相关器件

型号 品牌 描述 获取价格 数据表
BYV29-600P WEEN Ultrafast power diode

获取价格

BYV29B-300 VISHAY Ultrafast Rectifier

获取价格

BYV29B-300-E3/45 VISHAY DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

获取价格

BYV29B-300-E3/81 VISHAY DIODE GEN PURP 300V 8A TO263AB

获取价格

BYV29B-300HE3/45 VISHAY DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

获取价格

BYV29B-300-HE3/45 VISHAY DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

获取价格