UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
15
1000
100
10
Resistive or Inductive Load
TJ = 125 °C
TJ = 100 °C
10
5
1.0
TJ = 25 °C
0.1
0
40
60
80
100
20
0
100
50
150
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
100
120
TC = 105 °C
8.3 ms Single Half Sine-Wave
100
80
60
40
20
0
at 5 A, 50 A/µs
at 2 A, 20 A/µs
10
at 5 A, 50 A/µs
at 1 A, 100 A/µs
trr
Qrr
at 2 A, 20 A/µs
1
25
50
75
100
125
1
10
100
Junction Temperature (°C)
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
100
100
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Pulse Width = 300 µs
1 % Duty Cycle
10
TJ = 100 °C
1.0
10
TJ = 125 °C
TJ = 25 °C
0.1
0.01
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88552
Revision: 06-Nov-07
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PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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