Datasheet > BY500-600/4E-E3

BY500-600/4E-E3

更新时间： 2022-12-01 23:42:40

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	296K
描述
DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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BY500-600/4E-E3 数据手册

BY500-100 thru BY500-800

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

0.1

TJ = 25 °C

Pulse Width = 300 µs

1% Duty Cycle

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

TJ = 100 °C

T^J= 50 °C

0.1

T^J= 25 °C

0.01

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

Package outline dimensions in inches (millimeters)

DO-201AD

1.0 (25.4)

Min.

0.210 (5.3)

0.190 (4.8)

Dia.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

Min.

0.052 (1.32)

0.048 (1.22)

Dia.

Document Number 88544

10-Oct-05

www.vishay.com

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