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BY249-600 PDF预览

BY249-600

更新时间: 2024-09-29 22:25:31
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
5页 43K
描述
Rectifier diodes general purpose

BY249-600 技术参数

生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.75应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:66 A元件数量:1
相数:1端子数量:2
最大输出电流:7 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

BY249-600 数据手册

 浏览型号BY249-600的Datasheet PDF文件第2页浏览型号BY249-600的Datasheet PDF文件第3页浏览型号BY249-600的Datasheet PDF文件第4页浏览型号BY249-600的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
general purpose  
BY249 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 300 V / 600 V / 800 V  
VF 1.05 V  
• Low forward volt drop  
• High thermal cycling performance  
• Low thermal resistance  
k
1
a
2
IF(AV) = 7 A  
IFSM 60 A  
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Glass-passivated double diffused  
rectifier diodes. The devices are  
intended for low frequency power  
rectifier applications.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The BY249 series is supplied in the  
conventional  
leaded  
SOD59  
tab  
(TO220AC) package.  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.UNIT  
UNIT  
BY249  
-300 -600 -800  
VRSM  
VRRM  
Peak non-repetitive reverse  
-
-
300  
600  
800  
V
V
voltage  
Peak repetitive reverse  
voltage  
Crest working reverse voltage  
Continuous reverse voltage  
300  
600  
800  
VRWM  
VR  
-
-
200  
200  
500  
500  
700  
700  
V
V
IF(AV)  
IF(RMS)  
IFRM  
Average forward current1  
RMS forward current  
Peak repetitive forward  
current  
Peak non-repetitive forward  
current.  
sinusoidal; a = 1.57; Tmb 131 ˚C  
-
-
-
7
A
A
A
11  
60  
sinusoidal; a = 1.57;  
IFSM  
t = 10 ms  
t = 8.3 ms  
-
-
60  
66  
A
A
sinusoidal; Tj = 150 ˚C prior to  
surge; with reapplied VRWM(max)  
t = 10 ms  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction  
temperature  
-
-40  
-
18  
150  
150  
A2s  
˚C  
˚C  
1 Neglecting switching and reverse current losses.  
September 1998  
1
Rev 1.300  

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