Datasheet > BY249-800

BY249-800

更新时间： 2024-09-29 22:25:35

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恩智浦 - NXP		整流二极管
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描述
Rectifier diodes general purpose

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BY249-800 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

general purpose

BY249 series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 300 V / 600 V / 800 V

V_F≤ 1.05 V

• Low forward volt drop

• High thermal cycling performance

• Low thermal resistance

I_F(AV)= 7 A

I_FSM≤ 60 A

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Glass-passivated double diffused

rectifier diodes. The devices are

intended for low frequency power

rectifier applications.

DESCRIPTION

cathode

anode

cathode

tab

The BY249 series is supplied in the

conventional

leaded

SOD59

tab

(TO220AC) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.UNIT

UNIT

BY249

-300 -600 -800

V_RSM

V_RRM

Peak non-repetitive reverse

300

600

800

voltage

Peak repetitive reverse

voltage

Crest working reverse voltage

Continuous reverse voltage

300

600

800

V_RWM

V_R

200

500

700

I_F(AV)

I_F(RMS)

I_FRM

Average forward current¹

RMS forward current

Peak repetitive forward

current

Peak non-repetitive forward

current.

sinusoidal; a = 1.57; T_mb≤ 131 ˚C

sinusoidal; a = 1.57;

I_FSM

t = 10 ms

t = 8.3 ms

sinusoidal; T_j= 150 ˚C prior to

surge; with reapplied V_RWM(max)

t = 10 ms

I²t

T_stg

T_j

I²t for fusing

Storage temperature

Operating junction

temperature

-40

150

A²s

˚C

1 Neglecting switching and reverse current losses.

September 1998

Rev 1.300

12 3 4 5

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