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BUB931TT4 PDF预览

BUB931TT4

更新时间: 2024-09-30 23:37:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
7页 74K
描述
TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 10A I(C) | TO-263AB

BUB931TT4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:TO-263, D2PAK-3
针数:4Reach Compliance Code:not_compliant
风险等级:5.84Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:400 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):300JEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:125 W
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:1.8 V
Base Number Matches:1

BUB931TT4 数据手册

 浏览型号BUB931TT4的Datasheet PDF文件第2页浏览型号BUB931TT4的Datasheet PDF文件第3页浏览型号BUB931TT4的Datasheet PDF文件第4页浏览型号BUB931TT4的Datasheet PDF文件第5页浏览型号BUB931TT4的Datasheet PDF文件第6页浏览型号BUB931TT4的Datasheet PDF文件第7页 
BU931T  
BUB931T  
HIGH VOLTAGE IGNITION COIL DRIVER  
NPN POWER DARLINGTONS  
VERY RUGGED BIPOLAR TECHNOLOGY  
HIGH OPERATING JUNCTION  
TEMPERATURE  
WIDE RANGE OF PACKAGES  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
APPLICATIONS  
3
3
2
HIGH RUGGEDNESS ELECTRONIC  
IGNITIONS  
1
1
TO-220  
D2PAK  
TO-263  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
500  
V
V
400  
5
V
10  
A
ICM  
Collector Peak Current  
Base Current  
15  
A
IB  
1
5
A
IBM  
Base Peak Current  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
125  
W
oC  
oC  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
1/7  
January 1999  

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