Datasheet > BU208D

BU208D

更新时间： 2025-07-26 06:44:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	112K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU208D 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU208D

DESCRIPTION

·With TO-3 package

·Built-in damper diode

·High voltage capability

APPLICATIONS

·For use in horizontal deflection output

stages for color TV receives.

PINNING(see fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

1500

700

UNIT

Open emitter

Open base

Open collector

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

P_T

T_C=25ꢀ

150

ꢀ

T_j

175

T_stg

-65~175

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction to case

1.0

K/W

12 3

中文翻译

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