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BTS917E3062A PDF预览

BTS917E3062A

更新时间: 2024-01-21 07:56:10
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动驱动器
页数 文件大小 规格书
11页 179K
描述
Peripheral Driver, 1 Driver, MOS

BTS917E3062A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.91
驱动器位数:1JESD-609代码:e0
端子数量:5封装主体材料:PLASTIC/EPOXY
封装等效代码:SMSIP5H,.6,67TB电源:10,12 V
认证状态:Not Qualified子类别:Peripheral Drivers
表面贴装:YES技术:MOS
端子面层:Tin/Lead (Sn/Pb)端子节距:1.7 mm
端子位置:SINGLEBase Number Matches:1

BTS917E3062A 数据手册

 浏览型号BTS917E3062A的Datasheet PDF文件第2页浏览型号BTS917E3062A的Datasheet PDF文件第3页浏览型号BTS917E3062A的Datasheet PDF文件第4页浏览型号BTS917E3062A的Datasheet PDF文件第5页浏览型号BTS917E3062A的Datasheet PDF文件第6页浏览型号BTS917E3062A的Datasheet PDF文件第7页 
HITFET BTS 917  
Smart Lowside Power Switch  
Features  
Product Summary  
Drain source voltage  
On-state resistance  
Current limit  
Logic Level Input  
Input Protection (ESD)  
Thermal Shutdown  
Overload protection  
Short circuit protection  
60  
V
V
DS  
100  
R
m  
DS(on)  
1.5 A  
3.5 A  
I
I
D(lim)  
Nominal load current  
Clamping energy  
D(ISO)  
1000 mJ  
E
AS  
Overvoltage protection  
Current limitation  
Maximum current adjustable with external resistor  
Current sense  
Status feedback with external input resistor  
Analog driving possible  
Application  
All kinds of resistive, inductive and capacitive loads in switching or  
linear applications  
µC compatible power switch for 12 V and 24 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS chip on chip tech-  
nology. Fully protected by embedded protected functions.  
V
bb  
+
LOAD  
M
2
NC  
Drain  
3
Overvoltage  
protection  
Current  
dv/dt  
1
4
limitation  
limitation  
IN  
CC  
Over-  
temperature  
protection  
Overload  
protection  
Short circuit  
ESD  
protection  
R
CC  
5
Source  
HITFET  
Page 1  
02.12.1998  
Semiconductor Group  

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