BTS6510B

更新时间： 2024-02-26 12:52:04

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口开关接口集成电路电源开关
页数	文件大小	规格书
15页	264K
描述
Smart Highside High Current Power Switch

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技术参数
数据手册

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BTS6510B 技术参数

生命周期：	Obsolete	包装说明：	, SMSIP7H,.55,50TB
Reach Compliance Code：	compliant	风险等级：	5.76
Is Samacsys：	N	驱动器位数：	1
端子数量：	7	最大输出电流：	150 A
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SMSIP7H,.55,50TB
电源：	12 V	认证状态：	Not Qualified
子类别：	Peripheral Drivers	标称供电电压：	12 V
表面贴装：	YES	技术：	MOS
端子节距：	1.27 mm	端子位置：	SINGLE
Base Number Matches：	1

BTS6510B 数据手册

Data Sheet BTS6510

Parameter and Conditions

Symbol

Values

Unit

at Tj =-40 ... +150°C, V = 12 V unless otherwise specified

min

typ

max

Protection Functions¹⁶⁾

Short circuit current limit (Tab to pins 1,2,6,7)¹⁷⁾

=6 V

T_c=-40°C: I_L(SC)

110

130 180

115

T_c=25°C: I_L(SC)

T_c=+150°C: I_L(SC)

I_L= 40 mA: -V_OUT(CL)

Output clamp ¹⁸

)

(inductive load switch off)

see diagram Ind. and overvolt. output clamp page 7

Output clamp (inductive load switch off)

at V_OUT= V_bb- V_ON(CL)(e.g. overvoltage),I_L= 40 mA

V_ON(CL)

T_jt

150

°C

Thermal overload trip temperature

Thermal hysteresis

∆T_jt

Reverse Battery

Reverse battery voltage ¹⁹

)

-V_bb

On-state resistance (Pins 1,2,6,7 to pin 4) T =25°C:

R_ON(rev)

5.4

8.9 12.3

7.0

mΩ

V_bb=-12V, V_IN=0, I_L=-20A, R_IS=1kΩ T =150°C:

Integrated resistor in V line

R_bb

120

Ω

Diagnostic Characteristics

Current sense ratio,

static on-condition,

k_ILIS=I_L:I_IS,

I_L=90A,T_j=-40°C:

T_j=25°C:

12 400 14 200 16 000

12 000 13 700 15 400

11 400 12 800 14 200

12 200 14 800 17 400

12 000 14 100 16 200

11 500 13 200 15 000

11 100 15 300 19 500

11 500 14 500 17 500

11 400 13 300 15 200

10 000 17 600 28 500

11 000 15 600 22 000

10 600 13 800 18 000

k_ILIS

T_j=150°C:

)

V_ON<1.5V ,

I_L=20A,T_j=-40°C:

T_j=25°C:

V_IS<V_OUT- 5V,

V_bIN>4.0V

see diagram on page 11

T_j=150°C:

I_L=10A,T_j=-40°C:

T_j=25°C:

T_j=150°C:

I_L=4A,T_j=-40°C:

T_j=25°C:

T_j=150°C:

I_IS=0 by I_IN=0 (e.g. during deenergizing of inductive loads):

¹⁶) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not

designed for continuous repetitive operation.

¹⁷) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The

lifetime will be reduced under such conditions.

)

This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode

is used, V_OUTis clamped to V_bb- V_ON(CL)at inductive load switch off.

The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

)

it is done with all polarity symmetric loads). Note that under off-conditions (I =I =0) the power transistor

IN IS

is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic

drain-source diode. The temperature protection is not active during reverse current operation! Increasing

reverse battery voltage capability is simply possible as described on page 8.

)

If V_ONis higher, the sense current is no longer proportional to the load current due to sense current

saturation, see I_IS,lim

Page 5 of 15

2003-Oct-01

1 2 3 456 7 8...15

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