Datasheet > BTS555-E3146

BTS555-E3146

更新时间： 2022-04-12 10:35:31

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
16页	296K
描述
Smart Highside High Current Power Switch

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BTS555-E3146 数据手册

Data Sheet BTS555

Parameter and Conditions

Symbol

Values

Unit

at Tj =-40 ... +150°C, V = 12 V unless otherwise specified

min

typ

max

)

Protection Functions¹⁵

16⁾

Short circuit current limit (Tab to pins 1,5)

=12 V, time until shutdown max. 300 µs T =-40°C: I

200

300

320

400

480

550

620

650

L(SCp)

T_c=25°C:

T_c=+150°C:

Short circuit shutdown delay after input current

positive slope, V_ON> V_ON(SC)

t_d(SC)

300

µs

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp ¹⁷⁾

I_L= 40 mA: -V_OUT(CL)

(inductive load switch off)

Output clamp (inductive load switch off)

at V_OUT= V_bb- V_ON(CL)(e.g. overvoltage)

I_L= 40 mA

V_ON(CL)

Short circuit shutdown detection voltage

(pin 3 to pins 1,5)

V_ON(SC)

T_jt

∆T_jt

150

°C

Thermal overload trip temperature

Thermal hysteresis

Reverse Battery

Reverse battery voltage ¹⁸⁾

On-state resistance (Pins 1,5 to pin 3)

V_bb=-12V, V_IN=0, I_L=-30A, R_IS=1kΩ T =150°C:

-V_bb

T =25°C:

R_ON(rev)

2.3

3.9

3.0

4.7

mΩ

Integrated resistor in V line

T =25°C: R_bb

110

125

135

150

Ω

T =150°C:

105

) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous repetitive operation.

) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by

permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.

This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode

is used, V_OUTis clamped to V_bb- V_ON(CL)at inductive load switch off.

The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

17)

18)

it is done with all polarity symmetric loads). Note that under off-conditions (I =I =0) the power transistor

IN IS

is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic

drain-source diode. The temperature protection is not active during reverse current operation! Increasing

reverse battery voltage capability is simply possible as described on page 9.

Infineon Technologies AG

2010-June-01

1 2 3 456 7 8...16

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