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BTS550P PDF预览

BTS550P

更新时间: 2024-02-13 10:20:47
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路电源开关过载保护驱动局域网
页数 文件大小 规格书
15页 155K
描述
Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

BTS550P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-218包装说明:ZIP, ZIP5,.15,.2,100TB
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.53其他特性:OVER CURRENT; OVER VOLTAGE; THERMAL
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T5
功能数量:1端子数量:5
输出电流流向:SINK最大输出电流:68 A
标称输出峰值电流:115 A封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装等效代码:ZIP5,.15,.2,100TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED电源:12/24 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:NO
技术:MOS端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:150 µs
接通时间:600 µs

BTS550P 数据手册

 浏览型号BTS550P的Datasheet PDF文件第1页浏览型号BTS550P的Datasheet PDF文件第3页浏览型号BTS550P的Datasheet PDF文件第4页浏览型号BTS550P的Datasheet PDF文件第5页浏览型号BTS550P的Datasheet PDF文件第6页浏览型号BTS550P的Datasheet PDF文件第7页 
Preliminary Data Sheet BTS550P  
Pin  
Symbol  
Function  
Output to the load. The pins 1 and 5 must be shorted with each other  
especially in high current applications!3)  
1
OUT  
O
2
3
IN  
I
Input, activates the power switch in case of short to ground  
Positive power supply voltage, the tab is electrically connected to this pin.  
In high current applications the tab should be used for the V connection  
instead of this pin4).  
V
bb  
+
bb  
Diagnostic feedback providing a sense current proportional to the load  
current; zero current on failure (see Truth Table on page 6)  
4
5
IS  
OUT  
S
Output to the load. The pins 1 and 5 must be shorted with each other  
especially in high current applications!3)  
O
Maximum Ratings at Tj = 25 °C unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
V
Supply voltage (overvoltage protection see page 4)  
Vbb  
Vbb  
42  
34  
Supply voltage for full short circuit protection,  
Tj,start =-40 ...+150°C:  
V
Load current (short circuit current, see page 4)  
Load dump protection VLoadDump =UA +Vs, UA =13.5V  
RI5) =2, RL =0.54, td =200ms,  
IN, IS= open or grounded  
IL  
self-limited  
90  
A
V
6)  
VLoad dump  
Operating temperature range  
Storage temperature range  
Tj  
Tstg  
Ptot  
-40 ...+150  
-55 ...+150  
360  
°C  
W
Power dissipation (DC), TC 25 °C  
Inductive load switch-off energy dissipation, single pulse  
Vbb =12V, Tj,start =150°C, TC =150°C const.,  
IL = 20 A, ZL = 15mH, 0, see diagrams on page 9  
3
4
J
EAS  
Electrostatic discharge capability (ESD)  
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD  
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ  
VESD  
kV  
Current through input pin (DC)  
Current through current sense status pin (DC)  
see internal circuit diagrams on page 6 and 7  
IIN  
IIS  
+15, -250  
+15, -250  
mA  
3)  
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current  
capability and decrease the current sense accuracy  
Otherwise add up to 0.5 m(depending on used length of the pin) to the RON if the pin is used instead of  
the tab.  
4)  
5)  
6)  
RI = internal resistance of the load dump test pulse generator.  
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.  
Semiconductor Group  
Page 2  
1998-Aug-31  

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