Datasheet > BTA316X-800C

BTA316X-800C

更新时间： 2024-04-09 18:58:53

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	505K
描述
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package in

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BTA316X-800C 数据手册

WeEn Semiconductors

BTA316X-800C

3Q Hi-Com Triac

Symbol Parameter

Conditions

Min

Typ

Max

Unit

I_H

holding current

on-state voltage

V_D= 12 V; T_j= 25 °C; Fig. 9

V_T

I_T= 18 A; T_j= 25 °C; Fig. 10

1.3

1.5

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit

500

V/μs

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 16 A;

dV_com/dt = 20 V/μs; (snubberless

condition); gate open circuit

A/ms

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simpliﬁed outline

Graphic symbol

main terminal 1

main terminal 2

gate

sym051

n.c.

mounting base; isolated

2 3

6. Ordering information

Table 3. Ordering information

Type number

Package Orderable part number

Name

TO220F BTA316X-800C,127

Packing Small packing Package

method quantity version

Tube 50 SOT186A

Package

issue date

14-Nov-2013

BTA316X-800C

7. Marking

Table 4. Marking codes

Type number

Marking codes

Assembly factory: d

Assembly factory: A

BTA316X-800C

BTA316X

800C

BTA316X

800C

PJdxxxx xx

PJAxxxx xx

BTA316X-800C

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Product data sheet

29 January 2023

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