Datasheet > BT158-600

BT158-600

更新时间： 2024-09-25 21:21:51

品牌	Logo	应用领域
DIGITRON		三端双向交流开关
页数	文件大小	规格书
4页	3018K
描述
Triac; Max Peak Repetitive Reverse Voltage: 8; Max TMS Bridge Input Voltage: 80; Max DC Reverse Voltage: 2

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中文翻译

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技术参数
数据手册

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BT158-600 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.83
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	TRIAC	Base Number Matches：	1

BT158-600 数据手册

BT158 SERIES

SILICON BIDIRECTIONAL THYRISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage

(T_J= -40 to 110°C, ½ sine wave, 50 to 60Hz, gate open)

V_DRM

Volts

BT158-400

BT158-600

400

600

Non-repetitive peak off-state voltage

(T_J= -40 to +110°C, t ≤ 10ms, gate open)

BT158-400

V_DSM

Volts

500

700

BT158-600

RMS on-state current

(full cycle sine wave 50 to 60Hz)

(T_C= 90°C)

I_T(RMS)

Amps

8.0

4.0

(T_C= 100°C)

Peak surge current

(1 cycle, 60Hz, T_C= 90°C, preceded and followed by rated current)

(50Hz, preceded and followed by rated current)

I_TSM

Rate of rise of on-state current (gate open, non-repetitive)

Circuit fusing considerations (T_J= -40 to 110°C , t = 1.0 to 10ms)

Peak gate voltage

di_T/dt

I²t

A/µs

A²s

V_GM

I_GM

Volts

Amps

Watts

°C

Peak gate current

2.0

Peak gate power (T_C= 90°C, pulse width = 2.0µs)

Average gate power (T_C= 90°C, t = 10ms)

Operating junction temperature range

Storage temperature range

P_GM

P_G(AV)

T_J

0.5

-40 to +110

-40 to +150

T_stg

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R_ӨJC

2.2

°C/W

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ.

Max

2.0

Unit

Peak blocking current (either direction)

I_DRM

(Rated V_DRM@ T_J= 110°C, gate open)

Peak on-state voltage (either direction)

V_TM

Volts

≤ 2%)

(I_TM= 11A peak, pulse width = 1 to 2ms, duty cycle

1.3

1.55

Gate trigger current (continuous dc)

(main terminal voltage = 12V, R_L= 100Ω, minimum gate pulse width = 2.0µs)

MT2(+), G(-)

I_GT

MT2(-), G(-)

MT2(+), G(-); MT2(-), G(-), T_C= -40°C

Rev. 20131205

12 3 4

中文翻译

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与BT158-600相关器件

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BT161543DGG	NXP	获取价格	16-bit latched transceiver with dual enable and master reset 3-State
BT161543DL	NXP	获取价格	16-bit latched transceiver with dual enable and master reset 3-State
BT162	DIGITRON	获取价格	SILICON BIDIRECTIONAL THYRISTORS
BT162240DGG	NXP	获取价格	16-bit inverting buffer/driver with 30ohm series termination resistors
BT162240DGG-T	NXP	获取价格	IC ABT SERIES, QUAD 4-BIT DRIVER, INVERTED OUTPUT, PDSO48, 6.10 MM, PLASTIC, SOT-362-1, TS
BT162240DL	NXP	获取价格	16-bit inverting buffer/driver with 30ohm series termination resistors
BT162240DL-T	NXP	获取价格	IC ABT SERIES, QUAD 4-BIT DRIVER, INVERTED OUTPUT, PDSO48, 7.50 MM, PLASTIC, MO-118AA, SOT
BT162244DGG	NXP	获取价格	16-bit buffer/line driver with 30ohm series termination resistors 3-State
BT162244DGG-T	NXP	获取价格	IC ABT SERIES, QUAD 4-BIT DRIVER, TRUE OUTPUT, PDSO48, 6.10 MM, PLASTIC, SOT-362-1, TSSOP2

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