Datasheet > BT151S-650L

BT151S-650L

更新时间： 2024-04-09 19:01:10

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	267K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring sensitive gate, high bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance.

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BT151S-650L 数据手册

WeEn Semiconductors

BT151S-650L

SCR

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak off-state

voltage

650

V_RRM

repetitive peak reverse

voltage

650

I_T(AV)

average on-state current half sine wave; T_mb≤ 103 °C; Fig. 1

7.5

I_T(RMS)

RMS on-state current

half sine wave; T_mb≤ 103 °C; Fig. 2;

Fig. 3

I_TSM

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

120

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

t_p= 10 ms; SIN

132

I²t

I²t for fusing

A²s

A/µs

dI_T/dt

rate of rise of on-state

current

I_G= 10 mA

I_GM

peak gate current

V_RGM

peak reverse gate

voltage

P_GM

P_G(AV)

T_stg

T_j

peak gate power

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.5

150

125

-40

001aab019

a =

1.57

tot

mb(max)

(°C)

(W)

1.9

2.2

107

116

125

2.8

conduction form

angle

factor

(degrees)

120

180

2.8

2.2

1.9

1.57

T(AV) (A)

Fig. 1. Total power dissipation as a function of average on-state current; maximum values

BT151S-650L

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Product data sheet

5 September 2018

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