Datasheet > BT139D-800E

BT139D-800E

更新时间： 2024-09-26 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		可控硅
页数	文件大小	规格书
8页	692K
描述
晶闸管(可控硅)/模块

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BT139D-800E 数据手册

UMW

UMW BT139

BT139-800Bidirectional Thyristor

●Product features and main applications:

NPNPN five-layer structure of silicon

bidirectional devices; with independent intellectual

property rights of single-sided digging technology,

table glass passivation process; multi-layer

metallized electrodes on the back; with high

blocking voltage and high temperature stability.

Mainly used in:

vacuum cleaners, power tools and other motor

speed controllers; solid state relays; heating

controllers (temperature regulation); other phase

control circuits.

●Characteristics

Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)

Symbol

I_T(RMS)

Parameter name

RMS on-state current (full sine

value

Unit

BTA

BTB

Tc=80℃

Tc=90℃

wave)

Non repetitive surge peak

on-state current (full cycle, Tj

initial = 25 °C)

F=50HZ

I_TSM

160

144

tp=20ms

I²t

I2t value for fusing

tp=10ms

A²S

A/us

Critical rate of rise of on-state

current IG = 2 x IGT, tr ≤

100 ns

di/dt

Tj=125℃

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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