Datasheet > BT137B-600E

BT137B-600E

更新时间： 2024-04-09 19:00:15

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描述
Planar passivated sensitive gate four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic

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BT137B-600E 数据手册

WeEn Semiconductors

BT137B-600E

4Q Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak off-state

voltage

600

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_mb≤ 102 °C; Fig. 1;

Fig. 2; Fig. 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; SIN

I²t

I²t for fusing

A²s

A/µs

dI_T/dt

rate of rise of on-state

current

I_G= 50 mA

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.5

150

125

-40

003aae689

003aae692

T(RMS)

(A)

T(RMS)

(A)

- 2

- 1

- 50

100

150

surge duration (s)

(°C)

f = 50 Hz

T_mb≤ 102 °C

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

BT137B-600E

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Product data sheet

13 July 2018

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