Datasheet > BT137B-600E

BT137B-600E

更新时间： 2024-04-09 19:00:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	275K
描述
Planar passivated sensitive gate four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BT137B-600E 数据手册

WeEn Semiconductors

BT137B-600E

4Q Triac

9. Characteristics

Table 6. Characteristics

Symbol

Static characteristics

I_GTgate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

2.5

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 10 A; T_j= 25 °C; Fig. 10

2.5

1.3

0.7

1.65

V_T

V_GT

on-state voltage

gate trigger voltage

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 400 V; I_T= 0.1 A; T_j= 125 °C;

Fig. 11

0.25

0.4

0.1

I_D

off-state current

V_D= 600 V; T_j= 125 °C

0.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 125 °C; (V_DM= 67%

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit

BT137B-600E

All information provided in this document is subject to legal disclaimers.

Product data sheet

13 July 2018

7 / 13

1...4 5 678 9 10...13

下载PDF

与BT137B-600E相关器件

型号	品牌	描述	获取价格	数据表
BT137B-600E/T3	NXP	TRIAC, 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, D2PAK-3	获取价格
BT137B600ET/R	ETC	TRIAC\|600V V(DRM)\|8A I(T)RMS\|SOT-404	获取价格
BT137B-600ET/R	NXP	600V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, D2PAK-3	获取价格
BT137B-600F	NXP	Triacs	获取价格
BT137B-600F	TECCOR	Thyristor Product Catalog	获取价格
BT137B-600F	WEEN	Planar passivated four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic packag	获取价格