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BSS138P PDF预览

BSS138P

更新时间: 2024-04-09 18:58:57
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 688K
描述
0.36A, 60V, 0.35W, N Channel, Small Signal MOSFETs

BSS138P 数据手册

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N-Channel Enhancement Mode MOSFET  
BSS138P  
Features  
Low on-resistance  
Low input capacitance  
Fast switching speed  
HBM: JESD22-A114-B: 2  
Typical Applications  
DC-DC converters  
Power management functions  
Battery operated systems and solid-state relays  
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.  
Mechanical Data  
Case: SOT-23  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208  
SOT-23  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BSS138P  
SOT-23  
3000 pcs / Tape & Reel  
138  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
Drain-to-Source Voltage  
VDSS  
VGSS  
60  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 70°C ) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TA = 25°C ) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
360  
mA  
mA  
mA  
mJ  
mW  
°C  
ID  
290  
IDM  
EAS  
PD  
1500  
0.2  
350  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Air *1  
RθJA  
-
335  
357  
°C /W  
MTM0160A: September 2023 [2.0]  
www.gmesemi.com  
1

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