Datasheet > BSG0813NDI_16

BSG0813NDI_16

更新时间： 2024-02-12 21:36:21

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	376K
描述
Dual asymmetric N-channel OptiMOSâ¢5 MOSFET

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中文翻译

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数据手册

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BSG0813NDI_16 数据手册

BSG0813NDI

Product Summary

Power Block

Features

V_DS

1.2

1.7

• Dual asymmetric N-channel OptiMOS™5 MOSFET

• Logic level (4.5V rated)

R_DS(on),max

V_GS=10 V

V_GS=4.5 V

• Optimized for high performance buck converters

• Pb-free lead plating; RoHS compliant

I_D

(4)

(3)

(2)

(1)

(5)

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

• Monolithic integrated Schottky like diode

S1/D2 (VPhase)

D1 (Vin)

(9)

S1/D2 (VPhase) (6)

D1 (Vin)

(7)

S1/D2 (VPhase)

S1 (VPhase)

G1 (GHS)

(8)

G2 (GLS)

(10)

S2 (GND)

Top view

Type

Package

Marking

BSG0813NDI

PG-TISON8-4

0813NDI

Maximum ratings, at Tj=25°C, unless otherwise specified ²⁾

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=70 °C, V_GS=10 V

T _C=70 °C, V_GS=4.5 V

Continuous drain current

T _A=25 °C,

V_GS=4.5 V³⁾

T _A=25 °C,

V_GS=4.5 V⁴⁾

160

I _D,pulse

T _C=70 °C

Pulsed drain current

Q1: I _D=10 A,

Q2: I _D=20 A,

R _GS=25 W

E_AS

Avalanche energy, single pulse

V_GS

P_tot

T _j=25 °C

Gate source voltage

Power dissipation

T _A=25 °C³⁾

T _A=25 °C⁴⁾

6.25

2.5

6.25

2.5

T _j, T _stg

-55 ... 150

55/150/56

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

°C

¹⁾J-STD20 and JESD22

Rev.2.1

page 1

2016-03-08

12 3 4 5 6 7...14

中文翻译

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