Datasheet > BS62LV2005TI

BS62LV2005TI

更新时间： 2024-02-29 17:50:12

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	280K
描述
Very Low Power/Voltage CMOS SRAM 256K X 8 bit

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数据手册

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BS62LV2005TI 数据手册

Very Low Power/Voltage CMOS SRAM

256K X 8 bit

BSI

BS62LV2005

DESCRIPTION

FEATURES

The BS62LV2005 is a high performance, very low power CMOS

Static Random Access Memory organized as 262,144 words by 8 bits

and operates from a wide range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.6uA and maximum access time of 55ns in 5V operation.

• Wide Vcc operation voltage : 4.5V ~ 5.5V

• Very low power consumption :

Vcc = 5.0V C-grade : 35mA (Max.) operating current

I- grade : 40mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

-70

-55

70ns(Max.) at Vcc = 5.0V

55ns(Max.) at Vcc = 5.0V

The BS62LV2005 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS62LV2005 is available in the JEDEC standard 32 pin

450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

PRODUCT FAMILY

POWER DISSIPATION

SPEED

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

(ns)

(ICCSB1, Max)

(ICC , Max)

PKG TYPE

TEMPERATURE

RANGE

Vcc=5.0V

6uA

Vcc=5.0V

35mA

BS62LV2005TC

BS62LV2005STC

BS62LV2005SC

BS62LV2005TI

BS62LV2005STI

BS62LV2005SI

TSOP 32

+0^OC to +70^OC 4.5V ~ 5.5V

-40^OC to +85^OC 4.5V ~ 5.5V

55 / 70

STSOP 32

SOP 32

TSOP 32

25uA

40mA

STSOP 32

SOP 32

BLOCK DIAGRAM

PIN CONFIGURATIONS

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

A13

A17

A13

CE2

A15

VCC

A17

A16

A14

A12

A15

Address

Memory Array

1024 x 2048

A16

1024

Row

BS62LV2005TC

BS62LV2005STC

BS62LV2005TI

BS62LV2005STI

A14

A12

Input

Decoder

Buffer

2048

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Column I/O

Input

Buffer

Write Driver

Sense Amp

A17

A16

A14

A12

VCC

A15

CE2

A13

Data

256

Output

Buffer

Column Decoder

BS62LV2005SC

BS62LV2005SI

A11

CE1

CE2

Vdd

Gnd

Control

Address Input Buffer

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

GND

A9 A8 A3 A2 A1 A0 A10

A11

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS62LV2005

12 3 4 5 6 7...10

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与BS62LV2005TI相关器件

型号	品牌	获取价格	描述	数据表
BS62LV2006	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2006_06	BSI	获取价格	Very Low Power CMOS SRAM 256K X 8 bit
BS62LV2006_08	BSI	获取价格	Very Low Power CMOS SRAM 256K X 8 bit
BS62LV2006DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2006DC55	BSI	获取价格	Very Low Power CMOS SRAM 256K X 8 bit
BS62LV2006DC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2006DC70	BSI	获取价格	Very Low Power CMOS SRAM 256K X 8 bit
BS62LV2006DC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2006DCG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2006DCG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 8 bit

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