Datasheet > BS616LV1013EC-70

BS616LV1013EC-70

更新时间： 2022-11-25 18:47:12

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	259K
描述
Very Low Power/Voltage CMOS SRAM 64K X 16 bit

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数据手册

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BS616LV1013EC-70 数据手册

BSI

BS616LV1013

AC ELECTRICAL CHARACTERISTICS ( TA = 0^oC to + 70^oC , Vcc = 3.0V )

WRITE CYCLE

JEDEC

PARAMETER

NAME

CYCLE TIME : 70ns

MIN. TYP. MAX.

PARAMETER

NAME

DESCRIPTION

Write Cycle Time

UNIT

t_AVAX

t_E1LWH

t_AVWL

t_AVWH

t_WLWH

t_WHAX

t_BW

t_WC

t_CW

t_AS

Chip Select to End of Write

Address Setup Time

Address Valid to End of Write

Write Pulse Width

t_AW

t_WP

t_WR

t_BW

t_WHZ

t_DW

t_DH

Write recovery Time

(CE,WE)

(LB,UB)

Date Byte Control to End of Write

Write to Output in High Z

Data to Write Time Overlap

Data Hold from Write Time

Output Disable to Output in High Z

t_WLQZ

t_DVWH

t_WHDX

t_GHQZ

t_OHZ

t_WHOX

t_OW

End of Write to Output Active

SWITCHING WAVEFORMS (WRITE CYCLE)

WRITE CYCLE1 ⁽¹⁾

ADDRESS

(3)

(11)

(5)

LB,UB

(3)

(2)

(4,10)

OHZ

D _OUT

D _IN

Revision 1.1

Jan. 2004

R0201-BS616LV1013

1...3 4 567 8 9

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