BR1005-BR1010
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE: 50 - 1000V
CURRENT: 10 A
Features
Low cost
!
!
!
BR-10
Low forward voltage
Low leakage current
.296(7.5)
.255(6.5)
.750
(19.1)
MIN.
Mechanical Data
.052(1.3) DIA.
.048(1.2) TYP.
Case: Molded plastic body
!
! Terminal: Lead solderable per MIL-STD-202E
.770(19.6)
.730(18.5)
method 208C.
HOLE FOR
NO. 6 SCREW
!
!
Polarity: Polarity symbols molded on case
Mounting position: Any
AC
.520(13.2) .770(19.6)
.480(12.2) .730(18.5)
AC
+
Weight:0. 20ounce, 5.62 grams
!
Dimensions in inches and (millimeters)
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
BR1005 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010
Unit
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
10
600
420
600
800
560
800
1000
700
V
Maximum DC Blocking Voltage
100
1000
V
IF(AV)
A
Maximum Average Forward Current Tc=55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
300
A
I2t
VF
A2S
V
160
1.0
Maximum Forward Voltage per Diode at IF = 5 A
IR
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
mA
mA
IR(H)
200
Ta = 100 °C
2.5
°C/W
°C
RqJC
TJ
Operating Junction Temperature Range
Storage Temperature Range
- 40 to + 150
- 40 to + 150
TSTG
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
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