Datasheet > BLM4435

BLM4435

更新时间： 2024-09-28 14:49:19

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
6页	668K
描述
"The BLM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V."

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BLM4435 数据手册

Pb Free Product

BLM4435

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The BLM4435 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V.

Schematic diagram

Marking and pin Assignment

SOP-8 top view

GENERAL FEATURES

● V_DS= -30V,I_D= -10A

R_DS(ON)< 25mΩ @ V_GS=-4.5V

R_DS(ON)< 18mΩ @ V_GS=-10V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Application

●Battery Switch

●Load Switch

●Power Management

Package Marking And Ordering Information

Device Marking

Ordering Codes

Package

Product Code

Packing

M4435

BLM4435

SOP-8

BLM4435

Reel

Absolute Maximum Ratings (TA=25℃

Parameter

unless otherwise noted)

Symbol

VDS

Limit

Unit

Drain-Source Voltage

-30

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

-10

I_D

Drain Current-Pulsed

(Note 1)

(Note 2)

-40

I_DM

Maximum Power Dissipation(Tc=25℃)

Maximum Power Dissipation(Tc=70℃)

Single pulse avalanche energy

Operating Junction and Storage Temperature Range

P_D

45.4

E_AS

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

R_θJA

℃/W

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